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Size-effect in layered ferrielectric CuInP_2S_6

机译:层状铁电体CuInP_2S_6的尺寸效应

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摘要

We report on polarization switching properties of thin flakes of van der Waals ferrielectric CuInP_2S_6. We observe mesoscale polarization domains, ferroelectric switching, and the Curie temperature above 299 K down to a thickness of ~50nm. However, the electromechanical response is progressively suppressed below 50 nm, and vanishes at room temperature at a thickness of ~10nm. Though larger than a single layer, 10nm is still a very small value compared to the expectations for an intrinsic ferroelectric semiconductor. We therefore propose a model for a doped surface layer that screens spontaneous polarization in this material. The charges in the screening layer may also participate in secondary chemical reactions, which may explain domain pinning observed in thermal cycling of the flakes above the Curie temperature. At the same time, ferroelectric switching is intertwined with ionic diffusion, resulting in erratic and damaging switching at room temperature. Owing to much stronger temperature dependence of ionic diffusion, the two phenomena can be decoupled allowing more reliable switching to be obtained at low temperatures.
机译:我们报道了范德华薄铁电CuInP_2S_6薄片的极化转换特性。我们观察到了中尺度极化域,铁电转换以及居里温度在299 K以上,厚度约50nm。但是,机电响应在50 nm以下逐渐受到抑制,并在室温下消失,厚度约为10nm。尽管比单层大,但是10nm与本征铁电半导体的期望值相比仍然是非常小的值。因此,我们提出了一种用于屏蔽这种材料中自发极化的掺杂表面层的模型。屏蔽层中的电荷还可能参与次级化学反应,这可以解释在居里温度以上的薄片热循环中观察到的畴钉扎现象。同时,铁电开关与离子扩散交织在一起,导致室温下开关不稳定和损坏。由于离子扩散对温度的依赖性更强,因此可以将两种现象解耦,从而在低温下可以获得更可靠的转换。

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  • 来源
    《Applied Physics Letters》 |2016年第17期|172901.1-172901.5|共5页
  • 作者单位

    The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krjijanovskogo, Kyiv 03142, Ukraine;

    The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Institute of Physics, National Academy of Sciences of Ukraine, 46, pr. Nauky, Kyiv 03028, Ukraine;

    Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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