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Enhancing charge-density-wave order in 1T-TiSe_2 nanosheet by encapsulation with hexagonal boron nitride

机译:六方氮化硼包覆增强1T-TiSe_2纳米片的电荷密度波阶

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摘要

Layered transition metal dichalcogenides (TMDs) provide an ideal platform for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order. When TMDs are reduced in thickness to the 2-D limit, it is expected that the substrates will exert a considerable influence on the electron states. Here, we report a study of the charge density wave state in 1T-TiSe_2 nanosheets of different thicknesses when the sheets are encapsulated by hexagonal Boron Nitride or supported on the SiO_2 substrate. Our results show that dimensionality reduction results in an enhancement of CDW order and that disorder and substrate phonons tend to destroy CDW order, preventing observation of intrinsic CDW transition in ultrathin samples. Encapsulated 10nm thick 1T-TiSe_2 samples exhibit intrinsic CDW with transition temperature as high as 235 K. Our study points out that choosing the right substrate is important in the search for room temperature CDW materials.
机译:层状过渡金属二硫化碳(TMD)为探索尺寸对相关电子相(例如电荷密度波(CDW)阶)的影响提供了理想的平台。当将TMD的厚度减小到2-D极限时,可以预期基板将对电子态产生相当大的影响。在这里,我们报道了当六方氮化硼封装或支撑在SiO_2衬底上时,不同厚度的1T-TiSe_2纳米片中电荷密度波状态的研究。我们的结果表明,降维导致CDW有序增强,无序和底物声子倾向于破坏CDW有序,从而阻止了超薄样品中固有CDW跃迁的观察。封装的10nm厚的1T-TiSe_2样品具有固有的CDW,其转变温度高达235K。我们的研究指出,选择正确的衬底对于寻找室温CDW材料很重要。

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  • 来源
    《Applied Physics Letters》 |2016年第14期|141902.1-141902.5|共5页
  • 作者单位

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546,Department of Chemistry, National University of Singapore, Singapore 117543;

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546,Department of Physics, National University of Singapore, Singapore 117542;

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546,Department of Chemistry, National University of Singapore, Singapore 117543;

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546,Department of Chemistry, National University of Singapore, Singapore 117543;

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546,Department of Chemistry, National University of Singapore, Singapore 117543,Department of Physics, National University of Singapore, Singapore 117542;

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546,Department of Chemistry, National University of Singapore, Singapore 117543;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:51

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