机译:电阻式随机存取存储器的电极相关开关行为的表面效应
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia,Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan;
Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan;
Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan;
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia;
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia;
机译:具有隧道势垒的基于Si_3N_4的电阻切换随机存取存储单元的电阻切换特性,适用于高密度集成和低功耗应用
机译:导电桥随机存取存储器件中纳米晶硅膜的电阻切换效应
机译:导电桥随机存取存储器件中纳米晶硅膜的电阻切换效应
机译:用于导电桥接电阻随机存取存储器应用的纳米晶体膜中的电阻切换特性
机译:阐述和优化了高级计算应用的电阻式随机存取存储器切换行为
机译:HfO2 / TiOx双层电阻随机存取存储器中的低功率电阻切换特性
机译:电阻式随机存取存储器的电极相关开关行为的表面效应