In situ surface and interface study of crystalline (3×1)-O on InAs

摘要

The oxidation behavior of de-capped InAs (100) exposed to O_2 gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290-330 ℃ with a coexistence of In_2O and As_2O_3. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO_2 is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO_2 growth at 100 ℃.