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Electric field control of magnetic anisotropy in the easy cone state of Ta/Pt/CoFeB/MgO structures

机译:Ta / Pt / CoFeB / MgO结构的易锥状态下磁各向异性的电场控制

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摘要

The electric-field control of magnetic anisotropy is of particular interest because it allows the manipulation of the magnetization direction in spintronic devices with high performance and low power consumption. In this work, we investigate the effect of an electric field on the magnetic anisotropy in Ta/Pt/CoFeB/MgO structures, whose easy axis of magnetization is canted from the z-axis, forming a cone state. When an electric field is applied to the sample, its anisotropy constants change, thus modulating the cone state. It is demonstrated that the cone angle is controlled between 22° and 32° by a bias field of 4 MV/cm and that it can persist even after removing the bias. Moreover, it fully recovers to the original value when a bias voltage with an opposite polarity is applied. The non-volatile and reversible control of the cone state paves the way towards the utilization of the magnetic cone state in spintronic devices.
机译:磁场各向异性的电场控制尤为重要,因为它可以控制自旋电子器件中具有高性能和低功耗的磁化方向。在这项工作中,我们研究了电场对Ta / Pt / CoFeB / MgO结构中磁各向异性的影响,该结构的易磁化轴从z轴倾斜,形成一个锥态。当将电场施加到样品时,其各向异性常数会发生变化,从而调制锥状态。已经证明,锥角通过4 MV / cm的偏置场控制在22°和32°之间,并且即使去除偏置后,锥角仍可以保持。此外,当施加具有相反极性的偏置电压时,它可以完全恢复到原始值。锥态的非易失性和可逆控制为自旋电子设备中磁锥态的利用铺平了道路。

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  • 来源
    《Applied Physics Letters》 |2016年第1期|012405.1-012405.5|共5页
  • 作者单位

    Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea,Research and Development Division, SK Hynix Semiconductor, Inc., Gyeonggi-do 17336, South Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea,School of Electrical Engineering, KAIST, Daejeon 34141, South Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea;

    Research and Development Division, SK Hynix Semiconductor, Inc., Gyeonggi-do 17336, South Korea;

    Research and Development Division, SK Hynix Semiconductor, Inc., Gyeonggi-do 17336, South Korea;

    Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:41

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