机译:镓空位络合物是造成Ⅲ族氮化物发光体Shockley-Read-Hall重组的原因
Materials Department, University of California, Santa Barbara, California 93106, USA,Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08845-0849, USA;
Center for Physical Sciences and Technology, Vilnius LT-01108, Lithuania,Department of Physics, Kaunas University of Technology, Kaunas LT-51368, Lithuania;
Materials Department, University of California, Santa Barbara, California 93106, USA,Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
机译:优化高性能氮化铟镓/氮化镓基薄膜垂直发光二极管的n型触点设计和芯片尺寸
机译:通过使用简单的n型电极图案改善大功率氮化铟镓/氮化镓基垂直发光二极管的性能
机译:使用无位错氮化铟镓/氮化镓多量子阱纳米棒阵列的高亮度发光二极管
机译:氮化镓基发光二极管(LED)用于节能照明和显示器
机译:通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
机译:电气驱动的无磷白色发光二极管采用基于氮化镓的双同心截头金字塔结构
机译:InGaN / GaN纳米线圆盘发光二极管中增强的表面钝化效果,可减轻肖克利-霍尔反射现象
机译:图案化蓝宝石衬底上的氮化镓发光体,可提高缺陷率和光提取效率