Electrical characteristics of MoS_2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure

摘要

Ferroelectric field-effect transistors (FeFET) based on MoS_2 have recently been shown to exhibit considerable potential for use in nano sized non-volatile memory devices. Here, we demonstrated fabrication and characterization of FeFET based on MoS_2 channel with vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer as back-gate insulator. In this device, counterclockwise hysteresis behavior was observed in the drain current-gate voltage curve, which is indicative of interaction between MoS_2 carrier modulation and ferroelectric polarization switching. Furthermore, our VDF-TrFE/MoS_2 FeFET exhibited only n-type behavior, a maximum linear mobility of 625 cm~2/V s, a large memory window width of 16 V, and a high on/off current ratio of 8 × 10~5.