Erratum: 'Electrical characterization and transport model of n-gallium nitride nanowires' [Appl. Phys. Lett. 107, 082103 (2015)]

摘要

In the TLM analysis in our paper, we mistakenly used the X-axis intercept, rather than half the X-axis intercept, as the transfer length L_T. Therefore, the specific contact resistance should have been ρc = 8.72 × 10~8 Ω cm~2, which is a factor of 2 less than reported. However, this correction has no influence on the presented model for determining the dopant concentration. The authors apologize to the readers of Applied Physics Letters for any confusion this caused. We would like to thank Yow-Jon Lin and Cheng-Chun Hung (Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan) for pointing out our mistake.