机译:外延石墨烯/ SiC肖特基发射极双极结光电晶体管中用于紫外线检测的少数载流子注入效率> 90%的证据
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA;
机译:高检测盲可见SiF_4生长外延石墨烯/ SiC肖特基接触双极型光电晶体管
机译:双极4H-SiC高压二极管中注入的p型发射极注入效率低的证据
机译:外延石墨烯/ SiC肖特基紫外光电二极管,其响应度和响应速度可调节多个数量级
机译:基于外延石墨烯(EG)/ SiC的肖特基发射极双极型光电晶体管,用于紫外线检测以及氢嵌入对器件I-V特性的影响
机译:4H-碳化硅中的高压外延发射极双极结型晶体管。
机译:具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台
机译:少数载流子注入外延肖特基势垒二极管。