Strictly monolayer large continuous MoS_2 films on diverse substrates and their luminescence properties

摘要

Despite a tremendous interest on molybdenum disulfide as a thinnest direct band gap semiconductor, single step synthesis of a large area purely monolayer MoS_2 film has not yet been reported. Here, we report a CVD route to synthesize a continuous film of strictly monolayer MoS_2 covering an area as large as a few cm~2 on a variety of different substrates without using any seeding material or any elaborate pretreatment of the substrate. This is achieved by allowing the growth to take place in the naturally formed gap between a piece of SiO_2 coated Si wafer and the substrate, when the latter is placed on top of the former inside a CVD reactor. We propose a qualitative model to explain why the MoS_2 films are always strictly monolayer in this method. The photoluminescence study of these monolayers shows the characteristic excitonic and trionic features associated with monolayer MoS_2. In addition, a broad defect related luminescence band appears at ～1.7eV. As temperature decreases, the intensity of this broad feature increases, while the band edge luminescence reduces.