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Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

机译:通过电场感应铁电相变和非均匀域切换控制磁弛豫

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摘要

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/ PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.
机译:应变介导的多铁性异质结构中磁场的电场调制被认为是使存储和磁性微波器件具有超低功耗的有前途的方案。但是,人们还不太了解电场感应的应变如何影响磁弛豫,磁弛豫是器件应用的重要物理过程。在这里,我们研究了在铁磁/铁电多铁异质结构FeGaB / PMN-PT和NiFe / PMN-PT中,在电场感应的铁电相变提供的两个不同应变状态下的共振磁化动力学。该应变不仅改变了磁各向异性,而且改变了磁弛豫。在FeGaB / PMN-PT中,我们观察到电场固有吉尔伯特阻尼的变化接近两倍,这归因于应变诱导的自旋轨道耦合调谐。相反,在PMN-PT衬底的相变过程中,外部线宽展宽的微小但可测量的变化归因于铁弹性域的不均匀转换。

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  • 来源
    《Applied Physics Letters》 |2016年第1期|012406.1-012406.5|共5页
  • 作者单位

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Electronic Materials Research Laboratory, Xi'an Jiaotong University, Xi'an 710049, China;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;

    Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;

    Department of Chemistry, Northeastern University, Boston, Massachusetts 02115, USA;

    Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA;

    Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA;

    Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA;

    Electronic Materials Research Laboratory, Xi'an Jiaotong University, Xi'an 710049, China;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:32

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