机译:Ge_2Sb_2Te_5的非晶相到六方相的高透射比对比度:可逆NIR窗口
Department of Physics, Punjabi University, Patiala, Punjab 147 002, India,Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, Punjab 147 002, India;
Department of Physics, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab 144 011, India;
Department of Physics, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab 144 011, India;
Advanced Materials and Devices Division, CSIR-National Physical Laboratory, New Delhi 110 012, India;
Advanced Materials and Devices Division, CSIR-National Physical Laboratory, New Delhi 110 012, India;
Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, Punjab 147 002, India;
机译:Ge_2Sb_2Te_5相变材料在非晶,立方和六方相中的光学和电子性质研究
机译:Ge_2Sb_2Te_5相变存储材料中的压力诱导可逆非晶化和非晶-非晶转变
机译:纳秒原位透射电子显微镜对可逆Ge_2Sb_2Te_5晶体非晶相变的研究
机译:过渡到晶相的非晶Ge_2Sb_2Te_5薄膜的结构演变
机译:六角极限周期相的物理:热力学,形成和振动模式。
机译:Ge2Sb2Te5相变存储材料中的压力诱导可逆非晶化和非晶-非晶过渡
机译:核驱动非晶态Ge_2Sb_2Te_5的结晶:密度泛函研究