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High transmittance contrast in amorphous to hexagonal phase of Ge_2Sb_2Te_5: Reversible NIR-window

机译:Ge_2Sb_2Te_5的非晶相到六方相的高透射比对比度:可逆NIR窗口

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摘要

Ge_2Sb_2Te_5 (GST) is one of the best phase change materials because of its splendid set of properties, viz., high thermal stability, fast crystallization speed, good endurance, scalability, and reliability. Phase transition [amorphous → face centered cubic (fcc) → hexagonal close packed (hep)] of GST thin films with annealing was studied using X-ray diffraction. Thin films in amorphous, fee, and hep phases are highly, medium, and negligible transparent in the near infra-red region, respectively. The optical transmission in amorphous, fee, and hep phases is ~92%, ~46%, and ~2%, respectively, at the wavelength of 2740 nm. At 2740 nm, a high transmission contrast (~90%) is observed with phase transition from the amorphous to hep phase. By utilizing large transmission contrast, it is demonstrated that GST can be availed as a potential candidate for reversible near infra-red-window. The sharp change in optical transmission with phase transition can be understood from the change in density of states in the valence band.
机译:Ge_2Sb_2Te_5(GST)是一组最好的相变材料,因为它具有出色的性能,即高热稳定性,快速结晶速度,良好的耐久性,可扩展性和可靠性。利用X射线衍射研究了退火过程中GST薄膜的相变[非晶态→面心立方(fcc)→六方密堆积(hep)]。在近红外区域,非晶相,电荷相和庚相的薄膜分别是高度,中度和可忽略的透明。在2740 nm的波长下,非晶相,电荷相和庚相的光传输分别为〜92%,〜46%和〜2%。在2740 nm处,从非晶相到庚相的相变具有很高的透射对比度(〜90%)。通过利用大的传输对比度,表明GST可以用作可逆的近红外窗口的潜在候选者。从价带中状态密度的变化可以理解,具有相变的光透射的急剧变化。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第26期|261102.1-261102.4|共4页
  • 作者单位

    Department of Physics, Punjabi University, Patiala, Punjab 147 002, India,Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, Punjab 147 002, India;

    Department of Physics, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab 144 011, India;

    Department of Physics, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab 144 011, India;

    Advanced Materials and Devices Division, CSIR-National Physical Laboratory, New Delhi 110 012, India;

    Advanced Materials and Devices Division, CSIR-National Physical Laboratory, New Delhi 110 012, India;

    Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, Punjab 147 002, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:27

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