首页> 外文期刊>Applied Physics Letters >Temperature-dependent electronic properties of inorganic-organic hybrid halide perovskite (CH_3NH_3PbBr_3) single crystal
【24h】

Temperature-dependent electronic properties of inorganic-organic hybrid halide perovskite (CH_3NH_3PbBr_3) single crystal

机译:无机-有机杂化钙钛矿(CH_3NH_3PbBr_3)单晶的随温度变化的电子特性

获取原文
获取原文并翻译 | 示例
       

摘要

In this paper, the temperature-dependent electronic properties of inorganic-organic hybrid halide perovskite (CH_3NH_3PbBr_3) single crystals are investigated. The dynamic current-time measurement results at different temperatures directly demonstrate that the electrical properties of the perovskite single crystal are dependent on the work temperature. We find that the Poole-Frankel conduction mechanism fits the current-voltage curves at small bias voltage (0-1 V) under darkness, which is mainly attributed to the surface defect states. The capability of carriers de-trapping from defects varies with different work temperatures, resulting in an increased current as the temperature increases under both darkness and illumination. In addition, the different transient photocurrent responses of incident light at two wavelengths (470 nm, 550 nm) further confirm the existence of defect states on the single crystal surface.
机译:本文研究了无机-有机杂化卤化物钙钛矿(CH_3NH_3PbBr_3)单晶的随温度变化的电子性能。在不同温度下的动态电流时间测量结果直接表明,钙钛矿单晶的电性能取决于工作温度。我们发现Poole-Frankel传导机制拟合了在黑暗条件下小偏压(0-1 V)下的电流-电压曲线,这主要归因于表面缺陷状态。载流子从缺陷中捕获的能力随不同的工作温度而变化,随着温度在黑暗和光照下均增加,电流会增加。此外,入射光在两个波长(470 nm,550 nm)处的不同瞬态光电流响应进一步证实了单晶表面上存在缺陷状态。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第23期|233302.1-233302.5|共5页
  • 作者单位

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China;

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China;

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China;

    Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Centre for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China;

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China;

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China;

    Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Centre for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China;

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China;

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China;

    State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China,Royal Inst Technol KTH, iPack VINN Excellence Ctr, S-16440 Stockholm, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:24

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号