Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures

摘要

Zn-polar BeMgZnO/ZnO heterostructures grown by molecular beam epitaxy on high resistivity GaN templates producing high-density two-dimensional electron gas (2DEG) are investigated. This is motivated by the need to reach plasmon-longitudinal optical (LO) phonon resonance for attaining minimum LO phonon lifetime. Achievement of high 2DEG concentration in MgZnO/ZnO heterostructures requires growth of the MgZnO barrier at relatively low temperatures, which compromises the ternary quality that in turn hinders potential field effect transistor performance. When this ternary is alloyed further with BeO, the sign of strain in the BeMgZnO barrier on ZnO switches from compressive to tensile, making the piezoelectric and spontaneous polarizations to be additive in the BeMgZnO/ZnO heterostructures much like the Ga-polar AlGaN/GaN heterostructures. As a result, a 2DEG concentration of 1.2 x 10~(13)cm~(-2) is achieved in the Be_(0.03)Mg_(0.41)Zn_(0.56)O/ZnO heterostructure. For comparison, a 2DEG concentration of 7.7 x 10~(12)cm~(-2) requires 2% Be and 26% Mg in the barrier, whereas the same in the MgZnO/ZnO system would require incorporation of more than 40% Mg into the barrier, which necessitates very low growth temperatures. Our results are consistent with the demands on achieving short LO phonon lifetimes through plasmon-LO phonon resonance for high carrier velocity.