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Nanoscale insight into the giant piezoelectric response in lead-free Fe-doped 0.95(Na_(1/2)Bi_(1/2))TiO_3-0.05BaTiO_3 single crystal

机译:纳米研究无铅掺杂Fe 0.95(Na_(1/2)Bi_(1/2))TiO_3-0.05BaTiO_3单晶中的巨大压电响应

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摘要

The Fe-doped lead-free 0.95(Na_(1/2)Bi_(1/2))TiO_3-0.05BaTiO_3 single crystal, reported in the previous work, which exhibited giant piezoelectric strain response (normalized strain constant up to ∼1300 pm/V) and a large quasi-static piezoelectric constant d_(33) of ∼600 pC/N, was investigated here with the emphasis on the domain structure so as to understand the nanoscale mechanism responsible for the giant strain response. Based on in-plane and out-of-plane piezoresponse force microscopy, it was found that Fe ion doping induced domain evolution from macrodomains of several micrometers to nanodomains of tens of nanometers. High-resolution transmission electron microscopy was adopted to give an insight into the fine domain structure after Fe doping. The domain evolution under an in situ electric field was further studied, and the results indicated that the giant strain response originated not only from the polarization rotation around the morphotropic phase boundary but also from the domain contribution.
机译:先前工作中报道的Fe掺杂的无铅0.95(Na_(1/2)Bi_(1/2))TiO_3-0.05BaTiO_3单晶表现出巨大的压电应变响应(归一化应变常数高达1300 pm) / V)和约600 pC / N的大准静态压电常数d_(33),此处重点研究畴结构,以了解引起巨大应变响应的纳米级机理。基于平面内和平面外的压电响应力显微镜,发现Fe离子掺杂引起了从几微米的宏观畴到几十纳米的纳米畴的畴演化。采用高分辨率透射电子显微镜可以深入了解铁掺杂后的微区结构。对原位电场作用下的畴演化进行了进一步的研究,结果表明,巨大的应变响应不仅起源于沿同晶相界的极化旋转,而且起因于畴的贡献。

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  • 来源
    《Applied Physics Letters》 |2017年第16期|162902.1-162902.4|共4页
  • 作者单位

    Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China;

    Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China;

    Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China;

    Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China;

    Key Laboratory of Resource Chemistry, Education Ministry, Department of Chemistry, Shanghai Normal University, 100 Guilin Road, Shanghai, China;

    Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China;

    Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China;

    Inorganic Materials Analysis and Testing Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China,University of Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, University of Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai, China,Shanghai Institute of Technology, Shanghai, China;

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, University of Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:14:19

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