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Combined selective emitter and filter for high performance incandescent lighting

机译:组合式选择性发射器和滤光片,用于高性能白炽灯照明

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摘要

The efficiency of incandescent light bulbs (ILBs) is inherently low due to the dominant emission at infrared wavelengths, diminishing its popularity today. ILBs with cold-side filters that transmit visible light but reflect infrared radiation back to the filament can surpass the efficiency of state-of-the-art light-emitting diodes (LEDs). However, practical challenges such as imperfect geometrical alignment (view factor) between the filament and cold-side filters can limit the maximum achievable efficiency and make the use of cold-side filters ineffective. In this work, we show that by combining a cold-side optical filter with a selective emitter, the effect of the imperfect view factor between the filament and filter on the system efficiency can be minimized. We experimentally and theoretically demonstrate energy savings of up to 67% compared to a bare tungsten emitter at 2000 K, representing a 34% improvement over a bare tungsten filament with a filter. Our work suggests that this approach can be competitive with LEDs in both luminous efficiency and color rendering index (CRI) when using selective emitters and filters already demonstrated in the literature, thus paving the way for next-generation high-efficiency ILBs.
机译:由于白炽灯泡(ILB)的主要发射是红外波长,因此其效率本质上很低,从而降低了其流行度。具有冷侧滤光器的ILB可以透射可见光,但会将红外辐射反射回灯丝,其效率可以超过最新的发光二极管(LED)。但是,实际的挑战,例如灯丝和冷侧过滤器之间的几何对齐不完全(视角系数)不完善,可能会限制可达到的最大效率,并使冷侧过滤器的使用无效。在这项工作中,我们表明,通过将冷侧滤光片与选择性发射器结合使用,可以将灯丝和滤光片之间不完美视角因素对系统效率的影响降至最低。从实验和理论上讲,与2000 K时的裸钨发射器相比,节能高达67%,比带有过滤器的裸钨丝提高了34%。我们的工作表明,当使用文献中已经证明的选择性发射器和滤光片时,这种方法在发光效率和显色指数(CRI)方面都可以与LED竞争,从而为下一代高效ILB铺平了道路。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第9期|094103.1-094103.5|共5页
  • 作者单位

    Device Research Laboratory, Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, United States;

    Device Research Laboratory, Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, United States;

    Device Research Laboratory, Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, United States;

    Department of Applied Physics and Materials Science, California Institute of Technology, 1200 East California Boulevard, Pasadena, CA, United States;

    Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, United States,Institute for Soldier Nanotechnology, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, United States;

    Device Research Laboratory, Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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