• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Physics Letters >Phase-locked array of quantum cascade lasers with an intracavity spatial filter
【24h】

Phase-locked array of quantum cascade lasers with an intracavity spatial filter

机译：带腔内空间滤波器的量子级联激光器的锁相阵列

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We show a phase-locked array of quantum cascade lasers with an intracavity spatial filter based on the Talbot effect. All the laser arrays show in-phase operation from the threshold current to full power current with a near-diffraction-limited divergence angle. The maximum power is just about 5 times that of a single-ridge laser for an eleven-laser array device and 3 times for a seven-laser array device. The structure was analyzed by using the multi-slit Fraunhofer diffraction theory, showing very good agreement with the experimental results. Considering the great modal selection ability, simple fabricating process, and potential for achieving continuous wave operation, this phase-locked array may be a hopeful solution to obtain higher coherent power.
机译：我们展示了基于塔尔伯特效应的带腔内空间滤波器的量子级联激光器的锁相阵列。所有激光器阵列都显示了从阈值电流到全功率电流的同相工作，并且具有接近衍射极限的发散角。对于11激光阵列设备，最大功率仅为单脊激光器的5倍，对于7激光阵列设备，最大功率为3倍。利用多缝弗劳恩霍夫衍射理论对结构进行了分析，与实验结果非常吻合。考虑到强大的模态选择能力，简单的制造工艺以及实现连续波操作的潜力，这种锁相阵列可能是获得更高相干功率的理想解决方案。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第6期|061108.1-061108.5|共5页
  • 作者

    Jia Zhiwei; Wang Lei; Zhang Jinchuan; Zhao Yue; Liu Chuanwei; Zhai Shenqiang; Zhuo Ning; Liu Junqi; Wang Lijun; Liu Shuman; Liu Fengqi; Wang Zhanguo;

  • 作者单位

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, China,College of Materials Science and Opto-Electronic Technology, University of Chinese, Academy of Sciences, Beijing, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:13

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号