首页> 外文期刊>Applied Physics Letters >Electrically-driven spectrally-broadened random lasing based on disordered photonic crystal structures
【24h】

Electrically-driven spectrally-broadened random lasing based on disordered photonic crystal structures

机译:基于无序光子晶体结构的电驱动谱扩展随机激光

获取原文
获取原文并翻译 | 示例
       

摘要

We present the effect of radius randomness on the resonant spectrum and modal characteristics of a photonic crystal. With the introduction of randomness, different localizations were analyzed. The random pattern was then fabricated onto our lateral cavity surface emitting laser. Electrically driven random lasing was obtained with the localization and broadened spectrum, and the decrease of threshold and the increase of output power were also observed. The decreased threshold was due to the appearance of additional modes and the degree of localization. The output power reached a maximum with a random variance of 20 nm. It meant that there was a transition case in a regime ranging from Anderson localization to the local band edge resonance, and a balance between the Fabry-Perot-like effect and the random modulation effect. When the random variance reached 50 nm, the transition case in a regime ranging from localized to diffusive became remarkable. The experimental results are consistent with our theoretical analysis. One of the properties that make a random laser special with respect to regular lasers is its complex features in emission spectra, which means low spectral coherence. Our investigation on this kind of laser has referential and instructional significances for full-field imaging at visible wavelengths and other wavelengths.
机译:我们提出了半径随机性对光子晶体的共振谱和模态特征的影响。随着随机性的引入,分析了不同的位置。然后将随机图案制作到我们的侧面腔表面发射激光器上。随着局部化和光谱的扩大,获得了电驱动的随机激射,并且观察到阈值的减小和输出功率的增大。阈值降低是由于出现了其他模式和定位程度。输出功率达到最大,随机变化为20 nm。这意味着从安德森定位到局部带边缘共振,以及法布里-珀罗样效应和随机调制效应之间的平衡,存在一种过渡情况。当随机方差达到50 nm时,在从局部到扩散范围内的过渡情况变得很明显。实验结果与我们的理论分析一致。使随机激光器与常规激光器不同的特性之一是其在发射光谱中的复杂特征,这意味着低光谱相干性。我们对这种激光器的研究对于可见光波长和其他波长的全场成像具有参考和指导意义。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第3期|031113.1-031113.5|共5页
  • 作者单位

    Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

    Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

    Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

    Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:12

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号