机译:组成可调的InGaAs纳米线阵列的增强的THz发射效率
Center for Physical Sciences and Technology, 01180, A. Gostauto 11, Vilnius, Lithuania;
Walter Schottky Institut, Physik Department, Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen, Am Coulombwall 4, Garching 85748, Germany;
Walter Schottky Institut, Physik Department, Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen, Am Coulombwall 4, Garching 85748, Germany;
Department of Chemistry, Ludwig-Maximilians-Universitat Munchen, Munich 81377, Germany;
Walter Schottky Institut, Physik Department, Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen, Am Coulombwall 4, Garching 85748, Germany;
Center for Physical Sciences and Technology, 01180, A. Gostauto 11, Vilnius, Lithuania;
Walter Schottky Institut, Physik Department, Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen, Am Coulombwall 4, Garching 85748, Germany;
Walter Schottky Institut, Physik Department, Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen, Am Coulombwall 4, Garching 85748, Germany;
Center for Physical Sciences and Technology, 01180, A. Gostauto 11, Vilnius, Lithuania;
机译:形成组成可调夹具纳米线阵列的光学吸收
机译:一种组合可调ZNXCD1-XSE / ZnO核 - 壳纳米线阵列:增强电荷分离及其光伏应用的机构
机译:通过湿化学蚀刻在各种基板上制造垂直排列的ZnO纳米锥阵列,与纳米线阵列相比,纳米锥阵列增强了光致发光发射
机译:使用电子束光刻技术制造的InGaAs纳米线的有偏THz发射
机译:超过1 THz带宽的大规模InP / InGaAs DHBT
机译:线槽纳米腔增强InGaAs / GaAs量子点/纳米线异质结构的单光子发射速率
机译:形成组成可调夹具纳米线阵列的光学吸收
机译:单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列,具有超过50%的差分量子效率