Short-wave infrared (λ = 3 µm) intersubband polaritons in the GaN/AIN system

摘要

We demonstrate intersubband polaritons in the short-infrared wavelength range (λ < 3 µm) relying on the GaN/AlN semiconductor system. The demonstration is given for an intersubband transition centered at λ = 3.07µm (E = 403meV). The polaritonic dispersion is measured at room temperature: a Rabi energy of 53meV (i.e., a minimum splitting of 106meV), which represents 13.1% of the bare transition, is demonstrated. A metal-insulator-metal resonator architecture is employed, which proves to be efficient even at these short wavelengths.