机译:氢化物气相外延生长导致电子辐照n-GaN寿命退化的缺陷
School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, South Korea;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia,Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia,Technological Institute for Superhard and Novel Carbon Materials, 7 Centralnaya St., Troitsk, Moscow 142190 Russia;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia,Research Institute of Scientific Instruments, Lytkarino, Industrial Zone "Turaevo" 8, Moscow Region 140080, Russia;
National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia;
University of Florida , Gainesville, Florida 32611, USA;
机译:氢化物气相外延,金属有机化学气相沉积和外延横向过生长在n-GaN中空穴陷阱的比较
机译:氢化物气相外延生长的未掺杂n-GaN薄膜中的深空穴陷阱
机译:氢化物气相外延生长的未掺杂n-GaN薄膜中的深空穴陷阱
机译:等离子体诱导对氢化物气相外延生长N-GaN /蓝宝石(0001)的热导率的影响
机译:氢化物气相外延生长的III-V半导体薄膜中的缺陷分析。
机译:通过氢化物气相外延减少在纳米级蓝宝石衬底上生长的AlGaN中的缺陷
机译:氢化物气相外延生长的独立式N-GaN中的深电子陷阱陷阱