Enhancing electrical conductivity of room temperature deposited Sn-doped ln_2O_3 thin films by hematite seed layers

摘要

Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up to sigma = 3300 S/cm are observed. The unproved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase. Published by AIP Publishing.