High performance GaN-based monolithic bidirectional switch using diode bridges

摘要

A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of similar to 1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.