High Quality Factor Graphene Resonator Fabrication Using Resist Shrinkage-Induced Strain

摘要

We used SU-8 shrinkage to fabricate strained graphene resonators to produce a high quality factor in a graphene resonator. A-few-layer graphene resonators were fabricated on a trench of an SU-8 resist. These resonators were clamped with diamond-like carbon (DLC), which was deposited by using focused-ion-beam chemical vapor deposition (FIB-CVD), and trimmed by using FIB etching. Annealing was used to apply tensile strain to the graphene resonators because SU-8 shrinks drastically. We also observed an increase in resonant frequency and quality factor in these graphene resonators after annealing. At room temperature, the quality factor of the best sample exceeded 7,000 for a resonator length of 10μm.