Low Temperature Graphene Synthesis from Poly(methyl methacrylate) Using Microwave Plasma Treatment

摘要

A graphene film having low sheet resistance (600Ω/sq.) was synthesized at low temperatures of 280℃. Utilizing microwave plasma treatment, graphene films were synthesized from a solid phase on a copper surface. The full width at half maximum of the 2D-band in the Raman spectrum indicated that a high quality graphene film was formed. Cross-sectional transmission electron microscopy observation revealed that the deposited graphene films consisted of single- or double-layer graphene flakes of nanometer order on the Cu surface, which agrees with the estimated number of layers from an average optical transmittance of 96%.