机译:通过闪光灯退火在SiO_2层上形成的高性能多Ge短沟道金属氧化物半导体场效应晶体管
Green Nanoelectronics Collaborative Research Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8569, Japan;
Green Nanoelectronics Collaborative Research Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8569, Japan;
Green Nanoelectronics Collaborative Research Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8569, Japan;
Green Nanoelectronics Collaborative Research Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8569, Japan;
Green Nanoelectronics Collaborative Research Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8569, Japan;
Green Nanoelectronics Collaborative Research Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8569, Japan;
机译:具有超薄SiO_2 / GeO_2双层钝化工艺制成的栅堆叠的高性能Ge金属氧化物半导体场效应晶体管
机译:NO退火4H-SiC / SiO_2金属氧化物半导体场效应晶体管的界面过渡层的系统结构和化学特性
机译:具有沉积后退火的Norma11y-off等离子辅助原子层沉积的AI2O3 / GaN金属氧化物半导体场效应晶体管的性能增强
机译:通过闪光灯退火工艺制造的高性能三栅极多Ge无结p型和n型MOSFET
机译:弹道单层黑色磷金属氧化物半导体场效应晶体管的紧凑型造型
机译:高性能ZnPc薄膜光敏材料有机场效应晶体管:多层电介质的影响系统和薄膜生长结构
机译:用于III-氮化物金属氧化物半导体异质结构场效应晶体管的SiO2层的数字氧化物沉积