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首页> 外文期刊>Applied physics express >A 60-nm-thick enhancement mode In_(0.65)Ga_(0.35)As/InAs/In_(0.65)Ga_(0.35)As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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A 60-nm-thick enhancement mode In_(0.65)Ga_(0.35)As/InAs/In_(0.65)Ga_(0.35)As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

机译：采用Au / Pt / Ti非退火欧姆技术制造的60nm厚增强模式In_（0.65）Ga_（0.35）As / InAs / In_（0.65）Ga_（0.35）As高电子迁移率晶体管电源逻辑应用

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摘要

A 60-nm-thick E-mode In_(0.65)Ga_(0.35)As/InAs/In_(0.65)Ga_(0.35)As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69mV/decade, a lower DIBL of 30mV/V, an I_(ON)/I_(OFF) ratio above 1.2 × 10~4 at V_(DS) = 0.5V and a high f_T of 378GHz and f_(max) of 214GHz at V_(DS) = 1.0 V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In_(0.65)Ga_(0.35)As/InAs/In_(0.65)Ga_(0.35)As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.
机译：成功地制造了60纳米厚的E型In_（0.65）Ga_（0.35）As / InAs / In_（0.65）Ga_（0.35）As高电子迁移率晶体管（HEMT），并使用Au / Pt /基于Ti的非退火欧姆技术，用于高速和低功耗逻辑应用。该器件的最小SS为69mV / decade，较低的DIBL为30mV / V，在V_（DS）= 0.5V时I_（ON）/ I_（OFF）比在1.2×10〜4以上，并且378GHz的f_T高和f_（max）在V_（DS）= 1.0 V时为214GHz。这些结果表明，未退火的欧姆接触可用于制造E模式In_（0.65）Ga_（0.35）As / InAs / In_（0.65）Ga_ （0.35）作为具有优异电特性的HEMT。预制的HEMT可能会在未来的高速和低功耗逻辑应用中使用。

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  • 来源
    《Applied physics express》 |2016年第2期|026502.1-026502.4|共4页
  • 作者

    Faiz Aizad Fatah; Yueh-Chin Lin; Ren-Xuan Liu; Kai-Chun Yang; Tai-We Lin; Heng-Tung Hsu; Jung-Hsiang Yang; Yasuyuki Miyamoto; Hiroshi Iwai; Chenming Calvin Hu; Sayeef Salahuddin; Edward Yi Chang;

  • 作者单位

    Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Institute of Photonic Systems, National Chiao-Tung University, Tainan 71150, Taiwan, R.O.C.;

    Institute of Photonic Systems, National Chiao-Tung University, Tainan 71150, Taiwan, R.O.C.;

    International College of Semiconductor Technology, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    International College of Semiconductor Technology, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, U.S.A.;

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, U.S.A.;

    Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.,International College of Semiconductor Technology, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.,Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.;

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