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Stability of a Cu_2O photoelectrode in an electrochemical cell and the performances of the photoelectrode coated with Au and SiO thin films

机译:Cu_2O光电极在电化学电池中的稳定性以及Au和SiO薄膜包覆的光电极的性能

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The photoresponse and stability of Cu_2O films have been examined. Thermodynamic calculations showed that, for Cu_2O, there exists a region of chemical stability potential between -0.218 and -0.489 V(S.C.E) for oxidation and reduction potential, respectively. In an aqueous solution, a deterioration in power output occurs at a rate of 50% per day. To stabilize the photocurrent, thin deposits of Au and SiO films onto Cu_2O electrodes have been studied. For the Au deposition, the photocurrent was either quenched or reduced. For the SiO deposited photoelectrode, its effect was to decrease the quantum efficiency of Cu_2O. However, the deposition does not affect the band gap at 2.11 eV (which ensued for an uncoated sample).
机译:研究了Cu_2O薄膜的光响应和稳定性。热力学计算表明,对于Cu_2O,存在一个分别在-0.218和-0.489 V(S.C.E)之间的化学稳定电位区,用于氧化和还原电位。在水溶液中,功率输出的恶化以每天50%的速度发生。为了稳定光电流,已经研究了Au和SiO薄膜在Cu_2O电极上的薄沉积物。对于Au沉积,将光电流淬灭或还原。对于SiO沉积的光电极,其作用是降低Cu_2O的量子效率。但是,沉积不会影响2.11 eV处的带隙(对于未镀膜的样品会随之发生)。

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