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Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration

机译:缝隙耦合毫米波介电谐振天线,用于高效单片集成

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摘要

A readily mass-producible, flip-chip assembled, and slot-coupled III-V compound semiconductor dielectric resonator antenna operating in the millimeter-wave spectrum has been fabricated and characterized. The antenna has a 6.1% relative bandwidth, deduced from its 10 dB return loss over 58.8–62.5 GHz, located around the resonance at 60.5 GHz. Gating in the delay-domain alleviated the analysis of the complex response from the measured structure. The radiation efficiency is better than ${-}0.1$ dB in simulations fed from the on-chip coupling-structure, but reduced by 3.7 dB insertion loss through the measurement assembly feed. Antenna gain measurements show distortion in relation to the simulated pattern, which has a maximum gain of 6 dBi, mainly caused by interference from the electrically large connector used in the assembly. Mode degeneration in the utilized quadratic-footprint resonator was not seen to influence the performance of the antenna. The antenna is intended for on-chip integration and the fabrication technology allows scaling of the operation frequency over the complete millimeter-wave spectrum.
机译:已经制造并表征了易于批量生产,倒装芯片组装并且缝隙耦合的毫米波频谱III-V型化合物半导体介电谐振器天线。天线具有6.1%的相对带宽,这是由位于50.5 GHz谐振附近的58.8–62.5 GHz的10 dB回波损耗得出的。延迟域中的选通减轻了对所测结构的复杂响应的分析。在片上耦合结构提供的模拟中,辐射效率优于 $ {-} 0.1 $ dB,但是通过测量组件的馈电可减少3.7 dB的插入损耗。天线增益测量显示相对于模拟方向图的失真,其最大增益为6 dBi,这主要是由于组件中使用的大型电气连接器的干扰引起的。看不到所利用的二次足迹谐振器中的模式退化会影响天线的性能。该天线用于片上集成,其制造技术允许在整个毫米波频谱上缩放工作频率。

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