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Bandstop Frequency-Selective Structures Based on Stepped-Impedance Loop Resonators: Design, Analysis, and Measurement

机译:基于阶跃阻抗环路谐振器的带阻频率选择结构:设计,分析和测量

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摘要

A new dual-polarized and dual-band second-order bandstop 3-D frequency-selective structure (FSS) is proposed with arbitrary band ratio. Compared with the square loop, the stepped-impedance (SI) loop resonator performs at lower basic resonant frequency and increases the first spurious resonant frequency. Different half-wavelength SI loop resonators are analyzed, compared, and employed to design single/dualband 3-D FSSs under TE polarization. A double-sided SI loop resonator with via holes is presented for constructing a dual-polarized single band FSS. By adjusting widths of low characteristic impedance sections, the FSS's band can be expanded into dual bands. Detailed analysis of the coupling between both identical resonators in series is provided for understanding the relationships between subresonators. In addition, the equivalent circuit models are developed to explain the operating principle and analyze parameter effects. The proposed FSS prototype is fabricated and then measured to verify the design methodology. The measured results agree with the simulated data and exhibit a dual-polarized and stable second-order bandstop response under different incident angles up to 30 degrees. The thickness of the structure is 23% of the free-space wavelength at the first center frequency, and the center frequency ratio of both stopbands is only 1.08.
机译:提出了一种具有任意带宽比的新型双极化双频二阶带阻3-D频率选择结构(FSS)。与方形环路相比,步进阻抗(SI)环路谐振器在较低的基本谐振频率下工作,并提高了第一寄生谐振频率。分析,比较和比较了不同的半波长SI环路谐振器,并将其用于设计TE极化下的单/双频3-D FSS。提出了一种带通孔的双面SI环形谐振器,用于构建双极化单频带FSS。通过调整低特征阻抗部分的宽度,FSS的频段可以扩展为双频段。提供两个串联的相同谐振器之间耦合的详细分析,以了解子谐振器之间的关系。此外,还开发了等效电路模型来解释工作原理并分析参数影响。制造提出的FSS原型,然后进行测量以验证设计方法。测量结果与模拟数据一致,并且在高达30度的不同入射角下均表现出双极化且稳定的二阶带阻响应。结构的厚度是在第一中心频率处的自由空间波长的23%,并且两个阻带的中心频率之比仅为1.08。

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