首页> 外文期刊>Advanced Optical Materials >C_1-Symmetric [Ir(C∧N1)(C∧N~2)(O∧O)]-Tris-Heteroleptic Iridium(Ⅲ)-Complexes with the Preferentially Horizontal Orientation for High-Performance Near-Infrared Organic Light-Emitting Diodes
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C_1-Symmetric [Ir(C∧N1)(C∧N~2)(O∧O)]-Tris-Heteroleptic Iridium(Ⅲ)-Complexes with the Preferentially Horizontal Orientation for High-Performance Near-Infrared Organic Light-Emitting Diodes

机译:C_1-对称[IR(C 1n1)(C 1N〜2)(O∧o)] - TRIS-异铱(Ⅲ) - 具有优先水平取向的高性能近红外有机发光二极管

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摘要

The development of high-efficiency near-infrared (NIR)-emitting Ir(III)-complex-based phosphors for reliable NIR-OLEDs (near-infrared organic light-emitting diodes) is still a formidable challenge. Herein, a molecule-engineered approach is developed to afford three C-1-symmetric [Ir(C^N-1)(C^N-2)(O^O)]-tris-heteroleptic Ir(III)-complexes ([Ir(iqbt)(dFppy)(acac)] (1), [Ir(iqbt)(ppy)(acac)] (2), and [Ir(iqbt)(dpqx)(acac)] (3)), whose good NIR-luminescent efficiency (phi(PL) = 0.18 for 1 (lambda(em) = 703 nm), 0.26 for 2 (lambda(em) = 715 nm) or 0.28 for 3 (lambda(em) = 707 nm)) originates from the strengthened (MLCT)-M-3 contribution (MLCT = metal-to-ligand charge transfer). Moreover, the quantitative molecular orientation determination of their doped emitting layers (EMLs) reveals that the preferentially horizontal orientation of the emitting dipoles is beneficial to their highly efficient NIR-OLEDs with light out-coupling. Especially for the NIR-OLED -2 with lambda(em) = 715 nm, a high performance (eta(Max)(EQE) = 5.30% and negligible (2%) efficiency-roll-off) is realized among the reported solution-processed NIR-OLEDs based on Ir(III)-complexes at similar color gamut. This result shows that C-1-symmetric [Ir(C^N-1)(C^N-2)(O^O)]-tris-heteroleptic Ir(III)-complexes can provide a new platform to low-cost and large-area scalable NIR-OLEDs.
机译:高效近红外线(NIR) - 用于可靠的NIR-OLED(近红外有机发光二极管)的磷光体的高效近红外(III)的磷光体仍然是一个强大的挑战。在此,开发了一种分子工程方法以提供三个C-1-对称[IR(C 1 ^ N-1)(C <^ N-1 N-2)(O& ^& o)] - tris - 核心红外(III) - 复合物([IR(IQBT)(DFPPY)(ACAC)](1),[IR(IQBT)(PPY)(ACAC)](2),以及[IR(IQBT)(DPQX) (ACAC)](3)),其良好的NIR-发光效率(PHI(PL)= 0.18(Lambda(EM)= 703nm),0.26,2(λ(λ(λ()= 715nm)或0.28 (λ(em)= 707nm))源自增强的(MLCT)-M-3贡献(MLCT =金属与配体电荷转移)。此外,它们掺杂的发光层(EML)的定量分子取向测定揭示了发光偶极孔的优选水平取向对它们的高效NIR-OLED具有轻型耦合。特别是对于λ(EM)= 715nm的NIR-OLED -2,高性能(ETA(MAX)(EQE)(EQE)= 5.30%,并且在据报道中实现了可忽略的(& 2%)效率滚动)基于IR(III)的溶液加工的NIR-OLED - 相似色域的复用。该结果表明,C-1-对称[IR(C 1 ^ N-1)(C& ^& N-2)(O& ^& O)] - TRIS-杂项IR(III) - 复杂剂可以为低成本和大面积可扩展的NIR-OLED提供新的平台。

著录项

  • 来源
    《Advanced Optical Materials》 |2021年第15期|2100117.1-2100117.10|共10页
  • 作者单位

    Northwest Univ Sch Chem Engn Xian 710069 Shaanxi Peoples R China;

    Northwest Univ Sch Chem Engn Xian 710069 Shaanxi Peoples R China;

    Northwest Univ Sch Chem Engn Xian 710069 Shaanxi Peoples R China;

    Northwest Univ Sch Chem Engn Xian 710069 Shaanxi Peoples R China|Wenzhou Univ Coll Chem & Mat Engn Inst New Mat & Ind Key Lab Environm Funct Mat Technol & Applicat Wen Wenzhou 325035 Zhejiang Peoples R China;

    Northwest Univ Sch Chem Engn Xian 710069 Shaanxi Peoples R China;

    Northwest Univ Sch Chem Engn Xian 710069 Shaanxi Peoples R China|Hong Kong Polytech Univ Inst Smart Energy Dept Appl Biol & Chem Technol & Res Hung Hom Hong Kong Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter State Key Lab Struct Chem Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter State Key Lab Struct Chem Fuzhou 350002 Fujian Peoples R China;

    Wenzhou Univ Coll Chem & Mat Engn Inst New Mat & Ind Key Lab Environm Funct Mat Technol & Applicat Wen Wenzhou 325035 Zhejiang Peoples R China;

    Hong Kong Polytech Univ Inst Smart Energy Dept Appl Biol & Chem Technol & Res Hung Hom Hong Kong Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    cyclometalated Ir(III)#8208; complex; near#8208; infrared phosphorescence; organic light#8208; emitting diodes; solution#8208; processed devices; transition dipole moment; tris#8208; heteroleptic configuration;

    机译:环荷芳烃IR(III)&#8208;靠近&#8208;红外磷光;有机光和#8208;发光二极管;解决方案&#8208;加工的设备;转换偶极矩;TRIS&#8208;异常配置;

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