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Universal Electroluminescence at Voltages below the Energy Gap in Organic Light-Emitting Diodes

机译:在有机发光二极管中的能隙低于电压下的通用电致发光

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摘要

In organic light-emitting diodes (OLEDs), it is typically assumed that a voltage equal to or higher than the energy gap of the emitters is required to observe electroluminescence (EL). However, EL at subgap voltages is observed and proposed to originate from up-conversion processes, such as fusion of low-energy triplet excitons. Here, it is demonstrated that EL at subgap voltages in OLEDs is universally present. By using emitters with negligible energy splitting between the singlet and triplet state, the need for incorporating low-energy triplet excitons is ruled out. The origin of EL at voltages below the energy gap is the recombination of diffused and thermally generated charge carriers, universally present in light-emitting diodes at nonzero temperatures, theoretically permitting electrical-to-optical power-conversion efficiencies exceeding unity.
机译:在有机发光二极管(OLED)中,通常假设需要等于或高于发射器的能隙的电压来观察电致发光(EL)。 然而,观察到并提出在副转换过程中源于uP-转化的过程,例如低能量三重态激子的融合。 这里,证明EL在OLED中的凹凸电压普遍存在。 通过使用单向和三重态之间具有可忽略的能量分裂的发射器,排除了将低能量三重态激子掺杂。 在低于能量隙下的EL的起源是扩散和热生成的电荷载体的重组,普遍存在非零温度下的发光二极管,理论上允许电光功率转换效率超过统一。

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