Nanoprinted Quantum Dot-Graphene Photodetectors

摘要

Photodetectors utilizing graphene field-effect transistors sensitized by colloidal quantum dots exhibit high responsivities under infrared light illumination. Precise, microscopic spatial control over quantum dot deposition is required to gain deeper insight into device mechanisms, optimize device performance, and enable new device architectures and applications. The latter may eventually include photodetectors with subwavelength device dimensions. Here, infrared photodetectors are fabricated by electrohydrodynamic nanoprinting of colloidal PbS quantum dots onto graphene field-effect transistors with varying quantum dot layer thicknesses on a single substrate, demonstrating the potential of the method for realizing small footprint detectors with high spatial resolution. Remarkably, while the responsivity of the photodetectors increases with increasing layer thicknesses up to 130 nm, the noise current is found to be independent of the layer thickness. In addition, the responsivity and noise current are both linearly dependent on the applied drain voltage and drain current. As a result, the specific detectivity is independent of the drain voltage, and the detector can be operated at lower drain voltages thus reducing power consumption. Finally, specific detectivities of at least 10(9) Jones at 1200 nm are obtained, without degradation of the charge carrier mobilities in graphene from the electrohydrodynamic printing.