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Liquid-Exfoliated Few-Layer InSe Nanosheets for Broadband Nonlinear All-Optical Applications

机译:用于宽带非线性全光学应用的液体剥离少层InSe纳米片

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The nonlinear optical response of 2D materials has attracted wide attention in the recent year due to their strong nonlinearity and broadband characteristics. A new optical scheme is presented enabling the implementation of the broadband nonlinear optical response and their all-optical applications of few-layered InSe nanosheets. First, few-layer InSe nanosheets are synthesized by using the liquid-phase exfoliated method; then the third-order nonlinear susceptibility is measured with the spatial self-phase modulation. Based on the obtained nonlinear optical response, a method is proposed for forming a nonreciprocal propagation photonic diode based on a mixed structure of InSe/C3N4. In addition, through the cross-phase modulation of the two beams, the all-optical switches and all-optical information conversion have also been discussed. The implementations of these few-layered InSe-based all-optical devices show that the layered InSe is indeed an excellent candidate for use in future all-optical photonic circuits as an optical diode and optical switching.
机译:近年来,二维材料的非线性光学响应由于其强大的非线性和宽带特性而受到广泛关注。提出了一种新的光学方案,可以实现宽带非线性光学响应及其在几层InSe纳米片上的全光学应用。首先,采用液相剥离法合成了几层InSe纳米片。然后利用空间自相位调制来测量三阶非线性磁化率。基于所获得的非线性光学响应,提出了一种基于InSe / C3N4混合结构的单向传播光子二极管的形成方法。另外,通过两束光束的交叉相位调制,还讨论了全光开关和全光信息转换。这些基于InSe的少数几层全光器件的实现表明,InSe层确实是极好的候选材料,可用于将来的全光子光子电路,如光电二极管和光开关。

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