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首页> 外文期刊>Advanced Optical Materials >Highly Sensitive Broadband Single-Walled Carbon Nanotube Photodetectors Enhanced by Separated Graphene Nanosheets
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Highly Sensitive Broadband Single-Walled Carbon Nanotube Photodetectors Enhanced by Separated Graphene Nanosheets

机译:分离石墨烯纳米片增强了高灵敏度宽带单壁碳纳米管光电探测器

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摘要

Single-walled carbon nanotube (SWCNT)/graphene Schottky junctions have great potential for high-performance all-carbon photodetector due to their excellent optical and electronic properties and efficient charge transfer. However, the further improvement of device performance is limited by the low absorption of ultrathin SWCNTs and large dark current of continuous graphene nanosheets. Here a proof-of-concept photodetector is reported using SWCNT/separated graphene (SGR) hybrid networks. The device is sensitive to a broadband wavelength from visible light to near-infrared light (405–1064 nm), showing an extremely high photoresponsivity of >3000 A W~(−1), a fast response speed of 44 μs, and high photoconductive gain of ≈4 × 10~6. Furthermore, the results demonstrate first the charge transfer dynamics at the planar SWCNT/SGR Schottky junctions by combining Raman spectra with current–voltage curves. The architecture strategy opens a new general route to fabricate ultrahigh-performance photodetectors based on SWCNT/SGR hybrids or other semiconductor/graphene hybrids.
机译:单壁碳纳米管(SWCNT)/石墨烯肖特基结由于其出色的光学和电子特性以及有效的电荷转移,在高性能全碳光电探测器方面具有巨大潜力。然而,器件性能的进一步提高受到超薄SWCNT的低吸收和连续石墨烯纳米片的大暗电流的限制。在这里,使用SWCNT /石墨烯(SGR)混合网络报告了概念验证光电探测器。该器件对从可见光到近红外光(405-1064 nm)的宽带波长敏感,显示出> 3000 AW〜(-1)的极高光响应性,44μs的快速响应速度和高光导增益≈4×10〜6此外,结果首先证明了拉曼光谱与电流-电压曲线的结合在平面SWCNT / SGR肖特基结处的电荷转移动力学。该架构策略为制造基于SWCNT / SGR混合体或其他半导体/石墨烯混合体的超高性能光电探测器开辟了一条新的通用路线。

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  • 来源
    《Advanced Optical Materials 》 |2018年第23期| 1800791.1-1800791.7| 共7页
  • 作者单位

    Key Laboratory of Thin Film and Microfabrication (Ministry ofEducation) Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University Shanghai 200240, P. R. China;

    Key Laboratory of Thin Film and Microfabrication (Ministry ofEducation) Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University Shanghai 200240, P. R. China;

    Key Laboratory of Thin Film and Microfabrication (Ministry ofEducation) Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University Shanghai 200240, P. R. China;

    Key Laboratory of Thin Film and Microfabrication (Ministry ofEducation) Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University Shanghai 200240, P. R. China;

    Key Laboratory of Thin Film and Microfabrication (Ministry ofEducation) Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University Shanghai 200240, P. R. China;

    Key Laboratory of Thin Film and Microfabrication (Ministry ofEducation) Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University Shanghai 200240, P. R. China;

    Key Laboratory of Thin Film and Microfabrication (Ministry ofEducation) Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University Shanghai 200240, P. R. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    broadband photodetectors; charge transfer dynamics; Schottky junctions; separated graphene; single-walled carbon nanotubes;

    机译:宽带光电探测器;电荷转移动力学;肖特基结;分离的石墨烯单壁碳纳米管;

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