High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

摘要

Recently, one of the transition metal dichalcogenides MoS_2 has generated substantial interest as a promising channel material for field-effect transistors (FETs), because of its intriguing electrical and optical properties. For example, FETs using single layer MoS_2 exhibited a high current ON/OFF ratio (～10~8) and a low subthreshold swing (SS, ～70 mV decade-1) with an electron mobility of ～200 cm~2V~(-1)S~(-1) in an HfO_2/MoS_2/SiO_2 dielectric environment. In addition, single layer MoS_2 transistors exhibited a higher photoresponsivity (7.5 mAW~(-1)) than graphene FETs, presenting a potential application as a photo transistor.