High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

摘要

In recent studies, there has been great progress in stimuli-responsive field-effect transistors (FETs) that are responsive to physical, chemical or biological stimuli. Stimuli-responsive FETs are very attractive for sensing applications due to their simplicity of design, ease of mass production in a high-density array, facile integration into integrated circuits, compatibility with a large-area conformable substrate, and inherent capability of signal amplification.