机译:具有平衡的空穴和电子迁移率的高性能双极二酮二吡咯并吡咯-噻吩并[3,2-苯并噻吩共聚物场效应晶体管
Cavendish Laboratory Cambridge University J J Thomson Avenue, Cambridge, CB3 OHE, UK Institut Materiaux Microelectronique Nanosciences de Provence, UMR CNRS 6242, Universite Aix-Marseille III, 13397 Marseille Cedex 20, France;
Cavendish Laboratory Cambridge University J J Thomson Avenue, Cambridge, CB3 OHE, UK School of Advanced Materials Engineering, Kookmin University, Seoul, South Korea;
Department of Chemistry and Centre for Plastic Electronics Imperial College, London, SW7 2AZ, UK;
Nano-Science Center University of Copenhagen Universitetsparken 5, DK-2100 Copenhagen, Denmark;
Cavendish Laboratory Cambridge University J J Thomson Avenue, Cambridge, CB3 OHE, UK;
Ris0 DTU Materials Research Division Frederiksborgvej 399, P.O. Box 49, DK-4000 Roskilde, Denmark;
Laboratory of Polymer Chemistry University Libre de Bruxelles Campus de la Plaine, 1050 Bruxelles, Belgique;
Department of Physics and Centre for Plastic Electronics Imperial College London, SW7 2AZ.UK;
Department of Chemistry and Centre for Plastic Electronics Imperial College, London, SW7 2AZ, UK;
Department of Chemistry and Centre for Plastic Electronics Imperial College, London, SW7 2AZ, UK;
Cavendish Laboratory Cambridge University J J Thomson Avenue, Cambridge, CB3 OHE, UK;
机译:基于二氰基硼苯苯苯基苯并苯并聚合的共聚物,具有良好平衡的孔和电子迁移率的Ambolar有机场效应晶体管
机译:基于二氰基硼苯苯苯基苯并苯并聚合的共聚物,具有良好平衡的孔和电子迁移率的Ambolar有机场效应晶体管
机译:基于聚合物/自组装单层改性InO_x杂化结构的低温固溶双极性场效应晶体管,用于平衡空穴和电子迁移率超过1 cm〜2 V〜(-1)s〜(-1)
机译:外延生长的石墨烯场效应晶体管,其具有超过1500cm {sup} 2 / vs和孔迁移率超过3400cm {sup} 2 / vs的空间迁移率
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:基于高迁移率和平衡载流子迁移率的溶液加工的八萘氧基取代的三(酞菁基)euro半导体的空气稳定双极性场效应晶体管
机译:具有平衡孔和电子迁移率的高性能双极Diketopyrrolopyrrole-Thieno 3,2-b噻吩共聚物场效应晶体管