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Spatially-Resolved In-Situ Structural Study of Organic Electronic Devices with Nanoscale Resolution: The Plasmonic Photovoltaic Case Study

机译:具有纳米级分辨率的有机电子器件的空间分辨原位结构研究:等离子光伏案例研究

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摘要

A major advance in organic electronics technology will be the development of new tools to monitor the internal structure of device components with nanometer resolution. Indeed, diagnostic tools at the nanoscale enable the establishment of structure-property relations that link length scales from local nano/hetero structures and interfaces to large scale devices. Such capability is particularly important in the case of bulk heterojunction (BHJ) organic photovoltaics (OPV), considering that the photovoltaic performance strongly depends on the nanoscale phase separation during the donor/acceptor heterojunction formation as well as the nanomorphology of the interfaces formed between the active and charge collection layers.
机译:有机电子技术的一项重大进步将是开发新工具,以纳米级分辨率监视设备组件的内部结构。确实,纳米级的诊断工具能够建立结构-属性关系,从而将长度尺度从局部纳米/异质结构和界面链接到大规模设备。考虑到光伏性能在很大程度上取决于供体/受体异质结形成过程中的纳米级相分离以及形成之间的界面的纳米形态,这种能力在本体异质结(BHJ)有机光伏(OPV)的情况下尤其重要。有源层和电荷收集层。

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  • 来源
    《Advanced Materials》 |2013年第34期|4760-4765|共6页
  • 作者单位

    Istituto di Struttura della Materia C.N.R., Via Fosso del Cavaliere 100. 00133 Roma, Italy;

    Istituto di Struttura della Materia C.N.R., Via Fosso del Cavaliere 100. 00133 Roma, Italy;

    Istituto di Struttura della Materia C.N.R., Via Fosso del Cavaliere 100. 00133 Roma, Italy;

    European Synchrotron Radiation Facility 6, Jules Horowitz, 38000 Grenoble, France;

    European Synchrotron Radiation Facility 6, Jules Horowitz, 38000 Grenoble, France;

    Center of Materials Technology & Photonics Technological Educational Institute (TEI) of Crete and, Electrical Engineering Department TEI of Crete, Heraklion 71004 Crete, Greece,Institute of Electronic Structure and Laser (IESL) Foundation for Research and Technology-Hellas (FORTH) Heraklion, 711 10 Crete, Greece and Department of Materials Science and Technology University of Crete, Greece;

    Institute of Electronic Structure and Laser (IESL) Foundation for Research and Technology-Hellas (FORTH) Heraklion, 711 10 Crete, Greece and Department of Materials Science and Technology University of Crete, Greece;

    Center of Materials Technology & Photonics Technological Educational Institute (TEI) of Crete and, Electrical Engineering Department TEI of Crete, Heraklion 71004 Crete, Greece;

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