Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (lambda < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

摘要

A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-anowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics.