机译:超快铝离子电池的氯铝酸盐阴离子插层衍生的3D石墨泡沫
Stanford Univ, Dept Chem, Stanford, CA 94305 USA;
Stanford Univ, Dept Chem, Stanford, CA 94305 USA;
Stanford Univ, Dept Chem, Stanford, CA 94305 USA|Shandong Univ Sci & Technol, Coll Elect Engn & Automat, Qingdao 266590, Peoples R China;
Stanford Univ, Dept Chem, Stanford, CA 94305 USA;
Stanford Univ, Dept Chem, Stanford, CA 94305 USA;
Stanford Univ, Dept Chem, Stanford, CA 94305 USA;
Tunghai Univ, Dept Chem, Taichung 40704, Taiwan;
Stanford Univ, Dept Chem, Stanford, CA 94305 USA;
Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan;
Stanford Univ, Dept Chem, Stanford, CA 94305 USA;
机译:固态NMR光谱透露可再充电铝 - 石墨电池中嵌入氯铝酸盐阴离子的分子水平环境
机译:用作铝离子电池的阴极材料的铝离子插层石墨X射线衍射图谱的DFT模拟
机译:非水 - 石墨电池中阴离子插层和去嵌入的初始电极动力学
机译:“盐水”电解质将可逆的阴离子嵌入到储能应用中的石墨中
机译:3D可打印锂离子电池和CuAG纳米线纵横比对石墨阳极性能的影响
机译:铝电池中氯铝酸盐阴离子-石墨嵌入的操作X射线衍射研究
机译:铝电池氯铝酸氯铝膜石墨嵌入的Operando X射线衍射研究