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Dielectrophoresis-Assisted Integration of 1024 Carbon Nanotube Sensors into a CMOS Microsystem

机译:介电泳辅助将1024个碳纳米管传感器集成到CMOS微系统中

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摘要

Carbon-nanotube (CNT)-based sensors offer the potential to detect single-molecule events and picomolar analyte concentrations. An important step toward applications of such nanosensors is their integration in large arrays. The availability of large arrays would enable multiplexed and parallel sensing, and the simultaneously obtained sensor signals would facilitate statistical analysis. A reliable method to fabricate an array of 1024 CNT-based sensors on a fully processed complementary-metal-oxide-semiconductor microsystem is presented. A high-yield process for the deposition of CNTs from a suspension by means of liquid-coupled floating-electrode dielectrophoresis (DEP), which yielded 80% of the sensor devices featuring between one and five CNTs, is developed. The mechanism of floating-electrode DEP on full arrays and individual devices to understand its self-limiting behavior is studied. The resistance distributions across the array of CNT devices with respect to different DEP parameters are characterized. The CNT devices are then operated as liquid-gated CNT field-effect-transistors (LG-CNTFET) in liquid environment. Current dependency to the gate voltage of up to two orders of magnitude is recorded. Finally, the sensors are validated by studying the pH dependency of the LG-CNTFET conductance and it is demonstrated that 73% of the CNT sensors of a given microsystem show a resistance decrease upon increasing the pH value.
机译:基于碳纳米管(CNT)的传感器提供了检测单分子事件和皮摩尔分析物浓度的潜力。此类纳米传感器的应用迈出的重要一步是将它们集成在大型阵列中。大阵列的可用性将实现多路复用和并行感测,同时获得的传感器信号将有助于统计分析。提出了一种在完全加工的互补金属氧化物半导体微系统上制造1024个基于CNT的传感器阵列的可靠方法。开发了一种高产率的工艺,该工艺可通过液体耦合的浮动电极介电电泳(DEP)从悬浮液中沉积CNT,该工艺可生产80%的具有1至5个CNT的传感器设备。研究了浮动电极DEP在完整阵列和单个设备上了解其自限制行为的机理。表征了相对于不同的DEP参数,整个CNT器件阵列上的电阻分布。然后在液体环境中将CNT器件用作液体门控CNT场效应晶体管(LG-CNTFET)。记录到栅极电压的电流依存性高达两个数量级。最后,通过研究LG-CNTFET电导的pH依赖性来验证传感器,并证明给定微系统的73%CNT传感器在增加pH值时电阻降低。

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  • 来源
    《Advanced Materials》 |2017年第17期|1606852.1-1606852.9|共9页
  • 作者单位

    RIKEN, QBiC, Kobe, Hyogo 6500047, Japan|Imperial Coll, Hamlyn Ctr, London SW7 2AZ, England;

    Swiss Fed Inst Technol, Dept Biosyst Sci & Engn, CH-4058 Basel, Switzerland;

    RIKEN, QBiC, Kobe, Hyogo 6500047, Japan|Swiss Fed Inst Technol, Dept Biosyst Sci & Engn, CH-4058 Basel, Switzerland;

    Swiss Fed Inst Technol, Dept Biosyst Sci & Engn, CH-4058 Basel, Switzerland;

    RIKEN, QBiC, Kobe, Hyogo 6500047, Japan|Swiss Fed Inst Technol, Dept Biosyst Sci & Engn, CH-4058 Basel, Switzerland;

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