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机译:可重构磁逻辑与非易失性存储器写入相结合
Tsinghua Univ, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China|Tsinghua Univ, Beijing Natl Ctr Elect Microscopy, Beijing 100084, Peoples R China;
Tsinghua Univ, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China|Tsinghua Univ, Beijing Natl Ctr Elect Microscopy, Beijing 100084, Peoples R China;
Tsinghua Univ, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China|Tsinghua Univ, Beijing Natl Ctr Elect Microscopy, Beijing 100084, Peoples R China;
Chinese Acad Sci, Inst Phys, Beijing 100084, Peoples R China;
Tsinghua Univ, Inst Microelectron, Beijing 100084, Peoples R China;
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239955, Saudi Arabia;
Tsinghua Univ, Inst Microelectron, Beijing 100084, Peoples R China;
King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239955, Saudi Arabia;
Tsinghua Univ, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China|Tsinghua Univ, Beijing Natl Ctr Elect Microscopy, Beijing 100084, Peoples R China;
机译:可重新配置的磁逻辑结合非易失性存储器写入
机译:用于非易失性存储器和可重新配置逻辑门操作的石墨烯-铁电元设备
机译:用于非易失性存储器和可重新配置逻辑门操作的石墨烯-铁电元设备
机译:60个非易失性逻辑内存架构纳米磁性逻辑和磁阻RAM之间的集成
机译:纳米级非易失性存储器电路设计使用新出现的自旋转移扭矩磁随机存取存储器
机译:用于非易失性存储器和可重新配置逻辑门操作的石墨烯-铁电元设备
机译:基于磁隧道结装置的非易失性逻辑内存查找表电路的电路优化技术