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Memristor-Based Analog Computation and Neural Network Classification with a Dot Product Engine

机译:点产品引擎的基于忆阻器的模拟计算和神经网络分类

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摘要

Using memristor crossbar arrays to accelerate computations is a promising approach to efficiently implement algorithms in deep neural networks. Early demonstrations, however, are limited to simulations or small-scale problems primarily due to materials and device challenges that limit the size of the memristor crossbar arrays that can be reliably programmed to stable and analog values, which is the focus of the current work. High-precision analog tuning and control of memristor cells across a 128 x 64 array is demonstrated, and the resulting vector matrix multiplication (VMM) computing precision is evaluated. Single-layer neural network inference is performed in these arrays, and the performance compared to a digital approach is assessed. Memristor computing system used here reaches a VMM accuracy equivalent of 6 bits, and an 89.9% recognition accuracy is achieved for the 10k MNIST handwritten digit test set. Forecasts show that with integrated (on chip) and scaled memristors, a computational efficiency greater than 100 trillion operations per second per Watt is possible.
机译:使用忆阻器交叉开关阵列来加速计算是在深度神经网络中有效实现算法的有前途的方法。但是,早期的演示仅限于模拟或小规模问题,这主要是由于材料和设备的挑战,限制了忆阻器纵横制开关阵列的大小,忆阻器纵横制开关阵列可以可靠地编程为稳定值和模拟值,这是当前工作的重点。演示了跨128 x 64阵列的忆阻器单元的高精度模拟调整和控制,并评估了所得的矢量矩阵乘法(VMM)计算精度。在这些阵列中执行单层神经网络推断,并评估与数字方法相比的性能。此处使用的忆阻器计算系统达到了相当于6位的VMM精度,而10k MNIST手写数字测试仪的识别精度达到了89.9%。预测表明,使用集成的(片上)和规模化忆阻器,每瓦每秒可实现100万亿次运算以上的计算效率。

著录项

  • 来源
    《Advanced Materials》 |2018年第9期|1705914.1-1705914.10|共10页
  • 作者单位

    Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA;

    Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA;

    Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA;

    Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA;

    HP Inc, HP Labs, Palo Alto, CA 94304 USA;

    Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA;

    Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA;

    Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA;

    Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA;

    Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA;

    Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA;

    Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    crossbar arrays; memristor; metal oxide; neuromorphic computing;

    机译:交叉开关阵列;忆阻器;金属氧化物;神经形态计算;

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