Recent Progress and Future Prospects of 2D-Based Photodetectors

摘要

Conventional semiconductors such as silicon- and indium gallium arsenide (InGaAs)-based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, nontransparency, nonflexibility, and complementary metal-oxide-semiconductor (CMOS) incompatibility. New emerging two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from the visible to far-infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light-detection capabilities. Notably the facile integration of 2D photodetectors on silicon photonics or CMOS platforms paves the way toward high-performance, low-cost, broadband sensing and imaging modalities.