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首页> 外文期刊>Advanced Functional Materials >Electrophosphorescent devices based on cationic complexes: Control of switch-on voltage and efficiency through modification of charge injection and charge transport
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Electrophosphorescent devices based on cationic complexes: Control of switch-on voltage and efficiency through modification of charge injection and charge transport

机译:基于阳离子配合物的电致磷光器件:通过修改电荷注入和电荷传输来控制接通电压和效率

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摘要

This paper reports an analysis of the properties of polymer light-emitting devices (PLEDs) doped with iridium complexes. Devices based on charged and neutral complexes doped into poly(vinylcarbazole) (PVK) are presented, and the role of the ions and the charge-transport properties of the complexes are discussed. In devices with the charged complexes, the concentration of the complex is found to have a profound effect on both the switch-on voltage and the efficiency. At higher doping concentrations the efficiency is increased and the switch-on voltage decreased. The increase in efficiency and decrease in switch-on voltage at higher dopant concentration are found to be due to an alternative charge transport path via the iridium dopant [Ir(bpy)](+) (bis(2-phenylpyridine-C-2,N')(2,2'-bipyridine)iridium hexafluorophosphate). However, at lower concentrations the complex becomes an electron trap and the efficiency is reduced. The devices are found to be significantly less efficient than those with neutral complexes. This difference is attributed to the ionic content and the charge trapping properties of the charged complexes. The low efficiency of the charged-complex-based devices could be overcome by utilizing a hole-blocking layer; devices with efficiencies as high as 23 cd A(-1) were obtained.
机译:本文报告了掺杂铱配合物的聚合物发光器件(PLED)的性能分析。介绍了基于带电荷和中性复合物的设备,该复合物掺杂到了聚乙烯基咔唑(PVK)中,并讨论了离子的作用和复合物的电荷传输性质。在带有带电复合物的设备中,发现复合物的浓度对接通电压和效率都有深远的影响。在较高的掺杂浓度下,效率提高,而接通电压降低。发现在较高的掺杂剂浓度下效率的提高和接通电压的降低是由于通过铱掺杂剂[Ir(bpy)](+)(双(2-苯基吡啶-C-2, N')(2,2'-联吡啶)六氟磷酸铱)。但是,在较低的浓度下,络合物变成电子陷阱,效率降低。发现该装置的效率明显低于具有中性配合物的装置。该差异归因于带电配合物的离子含量和电荷俘获性质。通过使用空穴阻挡层,可以克服基于电荷复合物的器件的低效率。获得的器件效率高达23 cd A(-1)。

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