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Aqueous Deposition of Ultraviolet Luminescent Columnar Tin-Doped Indium Hydroxide Films

机译:紫外发光柱状掺锡氢氧化铟薄膜的水沉积

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Indium tin oxide (ITO) has attracted intense interest as the most important transparent conducting oxide (TCO) that sees wide use in many opto-electrbnic and photo-chemical devices. The goal of this study is to explore the possibility of depositing ITO thin films using a bioinspired aqueous deposition route as an alternative. On the surface of sulfonated-self assembled monolayers, Sn-doped indium hydroxide films are obtained via a hydrogen peroxide-assisted method. As a result, the as-deposited indium tin hydroxide films possess a single hexagonal phase of In(OH)_3· XH_2O (0 ≤ x ≤ 1) with Sn doping percentage of (1.7 ± 0.2) at % and a column-like hierachical microstructure. Structural, compositional and property studies, including electron microscopy, X-ray diffraction, photoelectron spectroscopy, optical transmittance, photoluminescence and four-probe conductivity measurements, are conducted. The possible mechanism based on oriented attachment is discussed for the film growth. Strong room temperature photoluminescence within the near UV range is observed in the case of Sn-doped, but not in the one of the pure In(OH)_3· xH_2O films. Annealing of the indium tin hydroxide films above 200℃ gives nanocrystalline Sn:In_2O_3 films with higher UV and visible transparency and electrical conductivity compared with those of pure In_2O_3 films. The influence of annealing atmosphere is investigated.
机译:氧化铟锡(ITO)作为最重要的透明导电氧化物(TCO)引起了人们极大的兴趣,这种氧化物在许多光电和光化学设备中得到了广泛使用。这项研究的目的是探索使用生物启发的水沉积路径作为替代方法来沉积ITO薄膜的可能性。在磺化自组装单层表面上,通过过氧化氢辅助方法获得了掺Sn的氢氧化铟薄膜。结果,所沉积的铟锡氢氧化物膜具有In(OH)_3·XH_2O(0≤x≤1)的单一六方相,Sn掺杂百分比为(1.7±0.2)at%,并且呈柱状微观结构。进行了结构,组成和性能研究,包括电子显微镜,X射线衍射,光电子能谱,光学透射率,光致发光和四探针电导率测量。讨论了基于定向附着的可能机制,用于薄膜生长。在掺Sn的情况下,在近UV范围内观察到强的室温光致发光,而在纯In(OH)_3·xH_2O膜之一中则没有。与纯In_2O_3薄膜相比,将铟锡氢氧化物薄膜进行200℃以上的退火可得到纳米晶Sn:In_2O_3薄膜,该薄膜具有更高的紫外线以及可见透明性和导电性。研究了退火气氛的影响。

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