Indium Clusters in InGaN

摘要

The existence of indium clusters in InGaN layers has been a long debated and very controversial subject. This Rapid Research Letter reports on an investigation of InGaN layers by transmission electron microscopy (TEM) and three-dimensional atom probe tomography (APT). In clusters in the size range of 2-3 nm were observed in the active region, in contrast to recentrnreports, where only gross discontinuities and compositional variations on a 20-100 nm length scale, but not clustering, were found.