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Degradation Effects Related to the Hole Transport Layer in Organic Solar Cells

机译:与有机太阳能电池中的空穴传输层有关的降解作用

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摘要

The influence of the hole transport layer on device stability in polymerfullerene bulk-heterojunction solar cells is reported. Three different hole transport layers varying in composition, dispersion solvent, electrical conductivity, and work function were used in these studies. Two water-based hole transport layers, poly(3,4-ethylenedioxythiophene):poly(st yrene sulfonate) and polyaniline:poly(styrene sulfonate), and one isopropyl alcohol-based polyaniline:poly(styrene sulfonate) transport layer were investigated. Solar cells with the different hole transport layers were fabricated and degraded under illumination. Current-voltage, capacitance-voltage, and capacitance-frequency data were collected at light intensities of 16, 30,48, 80, and 100 mW cm~(-2) over a period of 7 h. Device performance and stability were compared between nonencapsulated and encapsulated samples to gain understanding about degradation effects related to oxygen and water as well as degradation mechanisms related to the intrinsic instability of the solar cell materials and interfaces. It is demonstrated that the properties of the hole transport layer can have a significant impact on the stability of organic solar cells.
机译:报道了空穴传输层对聚合物富勒烯本体-异质结太阳能电池中器件稳定性的影响。在这些研究中,使用了三种不同的空穴传输层,它们的成分,分散溶剂,电导率和功函数各不相同。研究了两个水基空穴传输层,即聚(3,4-乙撑二氧噻吩):聚(苯乙烯磺酸盐)和聚苯胺:聚(苯乙烯磺酸盐),以及一个异丙醇基聚苯胺:聚(苯乙烯磺酸盐)传输层。制备了具有不同空穴传输层的太阳能电池,并在光照下使其降解。在7 h的时间内,分别以16、30、48、80和100 mW cm〜(-2)的光强度收集电流-电压,电容-电压和电容-频率数据。比较了未封装样品和封装样品之间的器件性能和稳定性,以了解与氧气和水有关的降解效应以及与太阳能电池材料和界面的固有不稳定性有关的降解机理。已经证明,空穴传输层的性质可以对有机太阳能电池的稳定性具有显着影响。

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  • 来源
    《Advanced Functional Materials》 |2011年第14期|p.2705-2711|共7页
  • 作者单位

    Institute of Physics Energy and Semiconductor Research Laboratory Carl von Ossietzky University 26111 Oldenburg, Germany;

    Departament d'Enginyeria Electronica Electrica i Automatica Universitat Rovira i Virgili Avda. PaTsos Catalans 26, 43007 Tarragona, Spain;

    Departament d'Enginyeria Electronica Electrica i Automatica Universitat Rovira i Virgili Avda. PaTsos Catalans 26, 43007 Tarragona, Spain;

    Departament d'Enginyeria Electronica Electrica i Automatica Universitat Rovira i Virgili Avda. PaTsos Catalans 26, 43007 Tarragona, Spain;

    Enthone Nano Science Center Ferdinand-Harten-Str. 7, 22949 Ammersbek, Germany;

    Institute of Physics Energy and Semiconductor Research Laboratory Carl von Ossietzky University 26111 Oldenburg, Germany;

    Institute of Physics Energy and Semiconductor Research Laboratory Carl von Ossietzky University 26111 Oldenburg, Germany;

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