机译:氧化物离子导体晶界处的氧表面交换
Nanoscale Prototyping Laboratory Department of Mechanical Engineering Stanford University Stanford, CA 94305, USA,Laboratory of Electrochemical Interfaces, Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;
Department of Materials Science and Engineering Stanford University Stanford, CA 94305, USA;
Department of Materials Science and Engineering Seoul National University Seoul, 151-742, South Korea;
Nanoscale Prototyping Laboratory Department of Mechanical Engineering Stanford University Stanford, CA 94305, USA;
Nanoscale Prototyping Laboratory Department of Mechanical Engineering Stanford University Stanford, CA 94305, USA;
Department of Materials Science and Engineering Stanford University Stanford, CA 94305, USA;
Nanoscale Prototyping Laboratory Department of Mechanical Engineering Stanford University Stanford, CA 94305, USA,Department of Materials Science and Engineering Stanford University Stanford, CA 94305, USA;
机译:快速测定氧化物离子导体氧表面交换速率的新型脉冲同位素交换技术
机译:新型钙钛矿氧化物离子导体LaGaO_3中的氧表面交换和扩散
机译:二价阳离子加法对La掺杂氧氧离子导体中结构,电导率和晶界性能的影响
机译:透氧膜脱氧过程中表面氧交换对脱氧速率的影响
机译:纳米级金属导体表面和晶界散射的第一原理研究
机译:增强离子-电子混合导体中的晶界离子电导率
机译:氧离子导体上的氧表面交换和氧化脱氢
机译:快速离子导体作为氧化催化剂:过渡金属交换β-氧化铝上的甲烷氧化偶联和深度氧化。 (重新公布新的可用性信息)